Integrated electronic skin (e-skin) for harvesting of TENG energy through push-pull ionic electrets and ion-ion hopping mechanism

被引:18
作者
Cheedarala, Ravi Kumar [1 ]
Song, Jung Il [1 ]
机构
[1] Changwon Natl Univ, Dept Mech Engn, Res Inst Mechatron, Chang Won, South Korea
基金
新加坡国家研究基金会;
关键词
CONTACT SEPARATION MODE; TRIBOELECTRIC NANOGENERATORS; TRANSPARENT; PEDOT; CHARGE; FILMS;
D O I
10.1038/s41598-021-04555-3
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The development of highly durable, stretchable, and steady triboelectric nanogenerators (TENGs) is highly desirable to satisfy the tight requirement of energy demand. Here, we presented a novel integrated polymeric membrane that is designed by PEDOT: PSSa-naphthalene sulfonated polyimide (PPNSP)-EMI.BF4 Electronic skin (e-skin) for potential TENG applications. The proposed TENG e-skin is fabricated by an interconnected architecture with push-pull ionic electrets that can threshold the transfer of charges through an ion-hopping mechanism for the generation of a higher output voltage (Voc) and currents (Jsc) against an electronegative PTFE film. PPNSP was synthesized from the condensation of naphthalene-tetracarboxylic dianhydride, 2,2 '-benzidine sulfonic acid, and 4,4 ' diaminodiphenyl ether through an addition copolymerization protocol, and PEDOT: PSSa was subsequently deposited using the dip-coating method. Porous networked PPNSP e-skin with continuous ion transport nano-channels is synthesized by introducing simple and strong molecular push-pull interactions via intrinsic ions. In addition, EMI.BF4 ionic liquid (IL) is doped inside the PPNSP skin to interexchange ions to enhance the potential window for higher output Voc and Iscs. In this article, we investigated the push-pull dynamic interactions between PPNSP-EMI.BF4 e-skin and PTFE and tolerable output performance. The novel PPNSP- EMI.BF4 e-skin TENG produced upto 49.1 V and 1.03 mu A at 1 Hz, 74 V and 1.45 mu A at 2 Hz, 122.3 V and 2.21 mu A at 3 Hz and 171 V and 3.6 mu A at 4 Hz, and 195 V and 4.43 mu A at 5 Hz, respectively. The proposed novel TENG device was shown to be highly flexible, highly durable, commercially viable, and a prospective candidate to produce higher electrical charge outputs at various applied frequencies.
引用
收藏
页数:12
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