Studies of photoluminescence of silicon nitride thin films deposited by RF magnetron sputtering

被引：0
|
作者：
Jia, Xiaoyun [1 ]
Xu, Zheng [1 ]
Zhao, Suling [1 ]
Zhou, Chunlan [1 ]
Li, Yuan [1 ]
Tang, Yu [1 ]
机构：
[1] Beijing Jiaotong Univ, Minist Educ, Inst Optoelect Technol, Key Lab Luminescece & Opt Informat, Beijing 100044, Peoples R China
来源：
AD'07: Proceedings of Asia Display 2007, Vols 1 and 2 | 2007年
关键词：
nitrogen silicon; nanostructures; silicon quantum dots;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
This work is focused on the enhancement in photoluminescence (PL) of SiNx deposited by radio frequency magnetron sputtering. The main photoluminescence emission recorded under different Ar/N-2 gas flow ratio shows an increase of emission intensity. These results were considered of quantum size effect of strongly absorbing silicon nanostructures (ns-Si) formed in the SiNx matrix with different sizes according to different stoechiometries. In this work the optical properties of the films, including refractive index n (lambda) indicate a correlation with film stoechiometry and microstructure. In order to investigate the PL intensity, the crystalline silicon quantum dots (Si QDs) formed in SiNx matrix were confirmed by measuring Raman spectra.
引用
收藏
页码：2155 / 2158
页数：4
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