Sol-gel processed tungsten trioxide nanocrystals layer for efficient hole-injection in quantum dot light-emitting diodes

被引：6

作者：

Zhao, Lei ^{[1
]}

Zhang, Zhengrong ^{[1
]}

Luo, Xiangdong ^{[1
]}

Liu, Zijiang ^{[1
]}

Zhang, Yidong ^{[2
]}

机构：

[1] Lanzhou City Univ, Sch Elect & Informat Engn, Lanzhou 730070, Gansu, Peoples R China

[2] Xuchang Univ, Inst Surface Micro & Nano Mat, Coll Chem & Mat Engn, Key Lab Micronano Energy Storage & Convers Mat He, Xuchang 461000, Peoples R China

来源：

THIN SOLID FILMS | 2021年 / 730卷

基金：

中国国家自然科学基金;

关键词：

Tungsten trioxide; Thin films; Nanocrystals; Hole-injection layer; Quantum dots light-emitting diodes; HIGH-PERFORMANCE; PEDOT PSS; OXIDE; WO3;

D O I：

10.1016/j.tsf.2021.138722

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we report highly bright and efficient quantum dot light-emitting diodes (QLEDs) using tungsten trioxide (WO3) nanocrystals (NCs) thin film as hole-injection layers (HIL). The WO3 thin film is prepared by a simple sol-gel method using W powder and H2O2 as precursors, stirring vigorously at room temperature, followed by calcinations at 420 degrees C for 1 h. The WO3 thin film is compact and smooth, enabling the formation of HIL in green QLED. The luminance, current efficiency and operational lifetime of the QLED is 18560 cd m (-2), 11.8 cd A (-1) and 11844 h, respectively.

引用

页数：5

共 27 条

[1] Solution-processed, high-performance light-emitting diodes based on quantum dots [J].

Dai, Xingliang ;

Zhang, Zhenxing ;

Jin, Yizheng ;

Niu, Yuan ;

Cao, Hujia ;

Liang, Xiaoyong ;

Chen, Liwei ;

Wang, Jianpu ;

Peng, Xiaogang .

NATURE, 2014, 515 (7525) :96-99

[2] Colloidal quantum-dot LEDs with a solution-processed copper oxide (CuO) hole injection layer [J].

Ding, Tao ;

Yang, Xuyong ;

Bai, Linyi ;

Zhao, Yongbiao ;

Fong, Kah Ee ;

Wang, Ning ;

Demir, Hilmi Volkan ;

Sun, Xiao Wei .

ORGANIC ELECTRONICS, 2015, 26 :245-250

[3] Physical mechanism responsible for the stretched exponential decay behavior of aging organic light-emitting diodes -: art. no. 213502 [J].

Féry, C ;

Racine, B ;

Vaufrey, D ;

Doyeux, H ;

Cinà, S .

APPLIED PHYSICS LETTERS, 2005, 87 (21) :1-3

[4]

Greiner MT, 2012, NAT MATER, V11, P76, DOI [10.1038/NMAT3159, 10.1038/nmat3159]

[5] Highly Efficient Energy Transfer in Light Emissive Poly(9,9-dioctylfluorene) and Poly(p-phenylenevinylene) Blend System [J].

Hassaan, Muhammad Umair ;

Liu, Yee-Chen ;

ul Hasan, Kamran ;

Rafique, Mohsin ;

Yetisen, Ali K. ;

Butt, Haider ;

Friend, Richard Henry .

ACS PHOTONICS, 2018, 5 (02) :607-613

[6] Interfacial electronic structure between a W-doped In2O3 transparent electrode and a V2O5 hole injection layer for inorganic quantum-dot light-emitting diodes [J].

Heo, Su Been ;

Yu, Jong Hun ;

Kim, Minju ;

Yi, Yeonjin ;

Lee, Ji-Eun ;

Kim, Han-Ki ;

Kang, Seong Jun .

RSC ADVANCES, 2019, 9 (21) :11996-12000

[7] Significant improvement in the photovoltaic stability of bulk heterojunction organic solar cells by the molecular level interaction of graphene oxide with a PEDOT: PSS composite hole transport layer [J].

Hilal, Muhammad ;

Han, Jeong In .

SOLAR ENERGY, 2018, 167 :24-34

[8] Ultrasonic Spray Processed, Highly Efficient All-Inorganic Quantum-Dot Light-Emitting Diodes [J].

Ji, Wenyu ;

Liu, Shihao ;

Zhang, Han ;

Wang, Rong ;

Xie, Wenfa ;

Zhang, Hanzhuang .

ACS PHOTONICS, 2017, 4 (05) :1271-1278

[9] Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films [J].

Kroeger, M. ;

Hamwi, S. ;

Meyer, J. ;

Riedl, T. ;

Kowalsky, W. ;

Kahn, A. .

APPLIED PHYSICS LETTERS, 2009, 95 (12)

[10] Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes [J].

Li, Jingling ;

Guo, Qiling ;

Jin, Hu ;

Wang, Kelai ;

Xu, Dehua ;

Xu, Gang ;

Xu, Xueqing .

RSC ADVANCES, 2017, 7 (44) :27464-27472

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