Measurement of dielectric properties of ferroelectric Ba1-xSrxTiO3 thin films

被引：0
|
作者：
Moon, SE [1 ]
Kim, EK
Lee, SJ
Kwak, MH
Kim, YT
Ryu, HC
Kang, KY
Han, SK
Kin, WJ
机构：
[1] Elect Telecommun Res Inst, Basic Res Lab, Taejon 305350, South Korea
[2] Changwon Natl Univ, Dept Ceram Sci & Engn, Chang Won 641773, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷
关键词：
Ba0.6Sr0.4TiO3 (BST); pulsed laser deposition; microwave;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Ferroelectric Ba0.6Sr0.4TiO3 (BST) thin films were grown on (La0.5Sr0.5)CoO3/Pt/Ti/SiO2/Si and MgO(100) substrates by the pulsed laser deposition method. The grain orientations of the films were controlled by the substrate orientation. Microwave properties of BST thin films have been measured using both metal-ferroelectric-metal (MFM) trilayer capacitor and metal-ferroelectric-dielectric (MFD) interdigital capacitor structure with frequency range upto 4 GHz at room temperature, and compared with the dielectric properties data measured in the frequency from 100 Hz to 1 MHz. Large frequency dependent dispersions and grain orientation dependent dielectric properties were found in both structures, MFM and MFD capacitors.
引用
收藏
页码：S1350 / S1353
页数：4
相关论文
共 50 条
  • [11] Comment: Dielectric properties of Ba1-xSrxTiO3 ceramics
    Univ of Puerto Rico, San Juan, United States
    J Phys D, 7 (1165):
  • [12] Nonlinear dielectric properties of Ba1-xSrxTiO3 ceramics
    Curecheriu, Lavinia Petronela
    Mitoseriu, Liliana
    Ianculescu, Adelina
    JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 482 (1-2) : 1 - 4
  • [13] Studies on electrical and dielectric properties of Ba1-xSrxTiO3
    Patil, D. R.
    Lokare, S. A.
    Devan, R. S.
    Chougule, S. S.
    Kanamadi, C. M.
    Kolekar, Yd.
    Chougule, B. K.
    MATERIALS CHEMISTRY AND PHYSICS, 2007, 104 (2-3) : 254 - 257
  • [14] Dielectric Properties of Paraelectric Ba1-xSrxTiO3 Ceramics
    Nedelcu, L.
    Toacsan, M. I.
    Banciu, M. G.
    Ioachim, A.
    FERROELECTRICS, 2009, 391 : 33 - 41
  • [15] DIELECTRIC-PROPERTIES OF THE BA1-XSRXTIO3 SYSTEM
    SYAMAPRASAD, U
    GALGALI, RK
    MOHANTY, BC
    MATERIALS LETTERS, 1988, 7 (5-6) : 197 - 200
  • [16] Microwave dielectric properties of the system Ba1-xSrxTiO3
    Costa, L. C.
    Aoujgal, A.
    Graca, M. P. F.
    Hadik, N.
    Achour, M. E.
    Tachafine, A.
    Carru, J. C.
    Oueriagli, A.
    Outzourit, A.
    PHYSICA B-CONDENSED MATTER, 2010, 405 (17) : 3741 - 3744
  • [17] Dielectric properties and microstructures of Ba1-xSrxTiO3 epitaxial thin films with compositional gradients normal to the substrates
    Zhu, XH
    Chan, HLW
    Choy, CL
    Wong, KH
    INTEGRATED FERROELECTRICS, 2002, 45 : 141 - 150
  • [18] Comparison of microwave dielectric properties of between (001) and (011) ferroelectric Ba1-xSrxTiO3 thin films grown by pulsed laser deposition
    Moon, SE
    Kim, EK
    Lee, SJ
    Han, SK
    Kang, KY
    Kim, WJ
    MATERIALS ISSUES FOR TUNABLE RF AND MICROWAVE DEVICES III, 2002, 720 : 79 - 84
  • [19] Dielectric properties of Ba1-xSrxTiO3 films grown on LaAlO3 substrates
    Gim, Y.
    Hudson, T.
    Fan, Y.
    Findikoglu, A.T.
    Kwon, C.
    Gibbons, B.J.
    Jia, Q.X.
    Materials Research Society Symposium - Proceedings, 2000, 603 : 175 - 180
  • [20] Experimental study of heat properties of Ba1-xSrxTiO3 thin films on a substrate
    Strukov, BA
    Davitadze, ST
    Kravchun, SN
    DEFECTS AND SURFACE-INDUCED EFFECTS IN ADVANCED PEROVSKITES, 2000, 77 : 279 - 284
12345