Measurement of dielectric properties of ferroelectric Ba1-xSrxTiO3 thin films

被引：0

作者：

Moon, SE ^{[1
]}

Kim, EK

Lee, SJ

Kwak, MH

Kim, YT

Ryu, HC

Kang, KY

Han, SK

Kin, WJ

机构：

[1] Elect Telecommun Res Inst, Basic Res Lab, Taejon 305350, South Korea

[2] Changwon Natl Univ, Dept Ceram Sci & Engn, Chang Won 641773, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷

关键词：

Ba0.6Sr0.4TiO3 (BST); pulsed laser deposition; microwave;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ferroelectric Ba0.6Sr0.4TiO3 (BST) thin films were grown on (La0.5Sr0.5)CoO3/Pt/Ti/SiO2/Si and MgO(100) substrates by the pulsed laser deposition method. The grain orientations of the films were controlled by the substrate orientation. Microwave properties of BST thin films have been measured using both metal-ferroelectric-metal (MFM) trilayer capacitor and metal-ferroelectric-dielectric (MFD) interdigital capacitor structure with frequency range upto 4 GHz at room temperature, and compared with the dielectric properties data measured in the frequency from 100 Hz to 1 MHz. Large frequency dependent dispersions and grain orientation dependent dielectric properties were found in both structures, MFM and MFD capacitors.

引用

页码：S1350 / S1353

页数：4

共 13 条

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