Negative capacitance in organic semiconductor devices: Bipolar injection and charge recombination mechanism

被引:140
作者
Ehrenfreund, E.
Lungenschmied, C.
Dennler, G.
Neugebauer, H.
Sariciftci, N. S.
机构
[1] Johannes Kepler Univ Linz, LIOS, A-4040 Linz, Austria
[2] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
基金
奥地利科学基金会; 以色列科学基金会;
关键词
D O I
10.1063/1.2752024
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report negative capacitance at low frequencies in organic semiconductor based diodes and show that it appears only under bipolar injection conditions. They account quantitatively for this phenomenon by the recombination current due to electron-hole annihilation. Simple addition of the recombination current to the well established model of space charge limited current in the presence of traps yields excellent fits to the experimentally measured admittance data. The dependence of the extracted characteristic recombination time on the bias voltage is indicative of a recombination process which is mediated by localized traps. (c) 2007 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 15 条
[1]   Dispersive electron transport in tris(8-hydroxyquinoline) aluminum (Alq3) probed by impedance spectroscopy -: art. no. 286601 [J].
Berleb, S ;
Brütting, W .
PHYSICAL REVIEW LETTERS, 2002, 89 (28)
[2]   Negative capacitance caused by electron injection through interfacial states in organic light-emitting diodes [J].
Bisquert, J ;
Garcia-Belmonte, G ;
Pitarch, A ;
Bolink, HJ .
CHEMICAL PHYSICS LETTERS, 2006, 422 (1-3) :184-191
[3]   Crossover from capacitive to pseudoinductive charge-relaxation in organic/polymeric light-emitting diodes -: art. no. 013505 [J].
Castro, FA ;
Bueno, PR ;
Graeff, CFO ;
Nüesch, F ;
Zuppiroli, L ;
Santos, LF ;
Faria, RM .
APPLIED PHYSICS LETTERS, 2005, 87 (01)
[4]   Negative capacitance effect in semiconductor devices [J].
Ershov, M ;
Liu, HC ;
Li, L ;
Buchanan, M ;
Wasilewski, ZR ;
Jonscher, AK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (10) :2196-2206
[5]   Negative capacitances in low-mobility solids [J].
Gommans, HHP ;
Kemerink, M ;
Janssen, RAJ .
PHYSICAL REVIEW B, 2005, 72 (23)
[6]   Charge transport and trapping in Cs-doped poly(dialkoxy-p-phenylene vinylene) light-emitting diodes -: art. no. 155216 [J].
Gommans, HHP ;
Kemerink, M ;
Andersson, GG ;
Pijper, RMT .
PHYSICAL REVIEW B, 2004, 69 (15) :155216-1
[7]   Effect of dye doping on the charge carrier balance in PPV light emitting diodes as measured by admittance spectroscopy [J].
Hulea, IN ;
van der Scheer, RFJ ;
Brom, HB ;
Langeveld-Voss, BMW ;
van Dijken, A ;
Brunner, K .
APPLIED PHYSICS LETTERS, 2003, 83 (06) :1246-1248
[8]   Double injection as a technique to study charge carrier transport and recombination in bulk-heterojunction solar cells -: art. no. 2222110 [J].
Juska, G ;
Arlauskas, K ;
Sliauzys, G ;
Pivrikas, A ;
Mozer, AJ ;
Sariciftci, NS ;
Scharber, M ;
Österbacka, R .
APPLIED PHYSICS LETTERS, 2005, 87 (22) :1-3
[9]   CALCULATION OF FREQUENCY-DEPENDENCE OF ADMITTANCE OF SCLC DIODES [J].
KASSING, R .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 28 (01) :107-117
[10]  
Lampert M. A., 1970, CURRENT INJECTION SO