Investigation of high-temperature degradation of platinum thin films with an in situ resistance measurement apparatus

被引:155
作者
Firebaugh, SL [1 ]
Jensen, KF [1 ]
Schmidt, MA [1 ]
机构
[1] MIT, Cambridge, MA 02139 USA
基金
美国国家科学基金会;
关键词
D O I
10.1109/84.661395
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Many microfabricated systems require metallizations that can withstand high temperatures, In particular, a microfabricated chemical reactor system which we are investigating needs thin metal films for heating and temperature sensing that can withstand prolonged 1000 degrees C exposure, The current microreactor metallization, a 100-nm platinum film with a 10-nm titanium adhesion layer, degrades at temperatures greater than 700 degrees C, This degradation was examined with a custom-built high-temperature resistance measurement apparatus in addition to chemical analysis, scanning electron microscopy (SEM), atomic-force microscopy (AFM) and wafer curvature measurements. Thicker films and coating layers increased the lifetime of these films while exposure to oxygen decreased lifetime, consistent with the hypothesized degradation mechanism of agglomeration.
引用
收藏
页码:128 / 135
页数:8
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