Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement

被引：0
|
作者：
Qin Jie-Yu [1 ,2 ]
Du Gang [2 ]
Liu Xiao-Yan [2 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
CHINESE PHYSICS B | 2014年 / 23卷 / 10期
关键词：
strain; quantum effect; tri-gate; GOI; BAND-STRUCTURE;
D O I：
10.1088/1674-1056/23/10/108501
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The strain impact on hole mobility in the GOI tri-gate pFETs is investigated by simulating the strained Ge with quantum confinement from band structure to electro-static distribution as well as the effective mobility. Lattice mismatch strain induced by HfO2 warps and reshapes the valence subbands, and reduces the hole effective masses. The maximum value of hole density is observed near the top corners of the channel. The hole density is decreased by the lattice mismatch strain. The phonon scattering rate is degraded by strain, which results in higher hole mobility.
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页数：4
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