Deep level investigation on n-In0.35Ga0.65As/GaAs structures

被引：0

作者：

Gombia, E ^{[1
]}

Mosca, R ^{[1
]}

Pal, D ^{[1
]}

Motta, A ^{[1
]}

Nasi, L ^{[1
]}

Bosacchi, A ^{[1
]}

Franchi, S ^{[1
]}

机构：

[1] CNR, Ist Maspec, I-43100 Parma, Italy

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 02期

关键词：

D O I：

10.1016/S0038-1101(97)00225-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the deep electronic levels in n-In0.35Ga0.65As epitaxial layers grown by molecular beam epitaxy (MBE) on graded InxGa1-xAs buffer/GaAs structures. InxGa1-xAs buffer layers with linear, parabolic and power composition grading law, respectively have been considered. The dependence of the deep levels distribution on the buffer grading law as well as on growth parameters such as the growth temperature and use of As-2 or As-4 beams is reported. (C) 1998 Elsevier Science Ltd. All rights reserved.

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页码：211 / 215

页数：5

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