Field-induced charge separation dynamics in monolayer MoS2

被引：9

作者：

Vella, Daniele ^{[1
,2
,3
]}

Ovchinnikov, Dmitry ^{[4
,5
]}

Viola, Daniele ^{[6
]}

Dumcenco, Dumitru ^{[4
,5
]}

Kung, Yen C. ^{[4
,5
]}

Pogna, Eva A. A. ^{[6
]}

Dal Conte, Stefano ^{[6
]}

Vega-Mayoral, Victor ^{[1
,2
,7
]}

Borzda, Tetiana ^{[1
,2
]}

Prijatelj, Matej ^{[1
,2
]}

Mihailovic, Dragan ^{[1
,2
,8
]}

Kis, Andras ^{[4
,5
]}

Cerullo, Giulio ^{[6
,9
]}

Gadermaier, Christoph ^{[1
,2
]}

机构：

[1] Jozef Stefan Inst, Dept Complex Matter, Jamova 39, Ljubljana 1000, Slovenia

[2] Jozef Stefan Int Postgrad Sch, Jamova 39, Ljubljana 1000, Slovenia

[3] Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore

[4] Ecole Polytech Fed Lausanne, Inst Elect Engn, CH-1015 Lausanne, Switzerland

[5] Ecole Polytech Fed Lausanne, Inst Mat Sci & Engn, CH-1015 Lausanne, Switzerland

[6] Politecn Milan, Dipartimento Fis, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy

[7] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland

[8] Ctr Excellence Nanosci & Nanotechnol, Jamova 39, Ljubljana 1000, Slovenia

[9] CNR, Ist Foton & Nanotecnol IFN, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy

来源：

2D MATERIALS | 2017年 / 4卷 / 03期

基金：

欧洲研究理事会; 欧盟地平线“2020”;

关键词：

excitons; transition metal dichalcogenides; femtosecond spectroscopy; photophysics; photovoltaics; LAYER; WS2; GENERATION; EXCITON; STATES; PHOTOLUMINESCENCE; PHOTOGENERATION; OPTOELECTRONICS; ABSORPTION; EXCITATION;

D O I：

10.1088/2053-1583/aa7ce0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The absorption spectra of 2D semiconductors are dominated by excitons with binding energy of several hundreds of meV. Nevertheless, even single layers show an appreciable photovoltaic effect and work as the active material in high sensitivity photodetectors, thus indicating some degree of free charge carrier photogeneration. Here, we perform ultrafast transient absorption spectroscopy on monolayer MoS2 in a field-effect transistor configuration. We show that even a moderate in-plane electric field of a few kV cm(-1) can significantly increase the yield of charge carriers from photogenerated hot electron-hole pairs.

引用

页数：7

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