Effects of substrate temperature on the growth of C60 polycrystalline films by physical vapor deposition

被引:20
作者
Cheng, WR [1 ]
Tang, SJ [1 ]
Su, YC [1 ]
Lin, YJ [1 ]
Chiu, KC [1 ]
机构
[1] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan
关键词
growth models; surface morphology; physical vapor deposition process; polycrystalline deposition; fullerites;
D O I
10.1016/S0022-0248(02)01974-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
This work examines the growth Of C-60 polycrystalline films by physical vapor deposition in a vertical chamber. By varying the substrate temperature T-sub, the as-deposited films are grouped into four types, according to surface morphology, elucidated by scanning electron microscopy. X-ray diffraction is then used to determine the degree of crystallinity of the grains in these polycrystalline films. Moreover, the T-sub-dependence of the surface morphology and the growth rate of these films are described by using a model that involves adsorption, surface kinetics, and re-evaporation of the incoming molecules. Finally, the optimal position for vapor deposition is proposed by applying the concept of constitutional supersaturation. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:401 / 407
页数:7
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