Enhanced electrical performance for conductive atomic force microscopy

被引：21

作者：

Blasco, X ^{[1
]}

Nafria, M ^{[1
]}

Aymerich, X ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Engn Elect, Bellaterra 08193, Spain

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2005年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.1832579

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A new configuration of a conductive atomic force microscopy (CAFM) is presented, which provides enhanced electrical specs and performance while keeping the nanometer spatial resolution. This is achieved by integrating in the same measurement system a CAFM and a semiconductor parameter analyzer (SPA). The CAFM controls the tip position and scanning parameters, and the SPA is used for sample biasing and measurement. To test this set up, thin SiO2 gate oxides of MOS devices have been characterized. For current measurements, the resulting dynamic range was from 1 pA up to 1 mA. The good performance of the conductive tip at such high currents is demonstrated. (C) 2005 American Institute of Physics.

引用

页数：3

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