The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

被引：7

作者：

Jolley, Gregory ^{[1
]}

Fu, Lan ^{[1
]}

Tan, Hark Hoe ^{[1
]}

Jagadish, Chennupati ^{[1
]}

机构：

[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 0200, Australia

来源：

NANOSCALE | 2010年 / 2卷 / 07期

基金：

澳大利亚研究理事会;

关键词：

PERFORMANCE;

D O I：

10.1039/c0nr00128g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on a detailed analysis of the effects of doping on the main device parameters of In0.5Ga0.5As/ GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors. Due to the relatively large conduction band offset of GaAs/Al0.2Ga0.8As (167meV) transitions from wetting layer to quantum well states are observed for the highly doped devices. Since increasing the doping concentration fills the quantum dot states, electrons are forced to occupy the one-dimensional wetting layer states and therefore have quantum-well-like properties. This has facilitated a comparative study of the effects of three-dimensional and one-dimensional confinement of electrons on device parameters such as the responsivity and dark current by studying one particular detector structure with different doping concentrations of the active region.

引用

页码：1128 / 1133

页数：6

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