4H-SiC Trench MOSFET With L-Shaped Gate

被引：54

作者：

Song, Qingwen ^{[1
]}

Yang, Shuai ^{[2
]}

Tang, Guannan ^{[2
]}

Han, Chao ^{[2
]}

Zhang, Yimeng ^{[2
]}

Tang, Xiaoyan ^{[2
]}

Zhang, Yimen ^{[2
]}

Zhang, Yuming ^{[2
]}

机构：

[1] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China

[2] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 04期

基金：

美国国家科学基金会;

关键词：

Breakdown voltage; 4H-SiC; trench MOSFET; electric field;

D O I：

10.1109/LED.2016.2533432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel 4H-SiC trench metal-oxide-semiconductor field-effect transistor (MOSFET) with an L-shaped gate (LSG) is proposed and studied via numerical simulations in this letter. Adoption of an additional LSG region that surrounds the bottom corner of the trench allows the peak electric field in the SiO2 dielectric to be significantly relieved by charge compensation, and the device breakdown voltage can be greatly enhanced without causing significant degradation of the output characteristics. In high-voltage blocking states, the electric field at the bottom corner of the trench is weakened, which leads to improved device performance. The peak electric field value in the SiO2 dielectric decreases by 32.3% when compared with that of a conventional 4H-SiC trench MOSFET, while the breakdown voltage increases by 80.4%.

引用

页码：463 / 466

页数：4

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