Temperature dependence of photoreflectance measurements in Ga0.47In0.53As epitaxial layers

被引:2
作者
'Bouamama, K [1 ]
Horig, W
Neumann, H
机构
[1] Univ Ferhat Abbas, Inst Phys, Setif 19000, Algeria
[2] Univ Leipzig, Inst Festkorperphys, D-04103 Leipzig, Germany
[3] Bioquant GMBH, D-12484 Berlin, Germany
关键词
D O I
10.1088/0268-1242/13/1/011
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Photoreflectance (PR) spectra were measured for different temperatures within the range from 78 K to 287 K. The obtained PR spectra of both LPE and VPE grown samples measured at different temperatures show Franz-Keldysh oscillations near the bandgap E-0. These spectra are well fitted with the cosine function approximation. The behaviour of E-0 with temperature is shown to be temperature-range dependent. E-0 varies linearly with temperatures above 150 K while this is not the case when T falls below 150 K. The obtained values for the energy bandgap E-0, the temperature coefficient dE(0)/dT and the spin-orbit splitting Delta(0) are compared with the published data in the literature.
引用
收藏
页码:75 / 78
页数:4
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