A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

被引：4

作者：

Begon-Lours, Laura ^{[1
]}

Halter, Mattia ^{[1
,2
]}

Pineda, Diana Davila ^{[1
]}

Popoff, Youri ^{[1
,2
]}

Bragaglia, Valeria ^{[1
]}

La Porta, Antonio ^{[1
]}

Jubin, Daniel ^{[1
]}

Fompeyrine, Jean ^{[1
,3
]}

Offrein, Bert Jan ^{[1
]}

机构：

[1] IBM Res GmbH, Ruschlikon, Switzerland

[2] Swiss Fed Inst Technol, Zurich, Switzerland

[3] Lumiphase AG, Zurich, Switzerland

来源：

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年

基金：

欧盟地平线“2020”;

关键词：

Ferroelectric; Memristor; Resistive Switching;

D O I：

10.1109/EDTM50988.2021.9420886

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (similar to 375 degrees C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.

引用

页数：3

共 12 条

[1]

[Anonymous], 2013, IEDM

[2] Ferroelectricity in hafnium oxide thin films [J].