Difference of deposition process of an amorphous carbon film due to source gases

被引:9
作者
Shinohara, Masanori [1 ]
Kawazoe, Hiroki [1 ]
Inayoshi, Takanori [1 ]
Kawakami, Taka-aki [1 ]
Matsuda, Yoshinobu [2 ]
Fujiyama, Hiroshi [1 ]
Nitta, Yuki [3 ]
Nakatani, Tatsuyuki [3 ]
机构
[1] Nagasaki Univ, Grad Sch Sci & Technol, Nagasaki 8528521, Japan
[2] Nagasaki Univ, Dept Elect & Elect Engn, Nagasaki 8528521, Japan
[3] Toyo Adv Technol Co Ltd, Ninami Ku, Hiroshima 7348501, Japan
关键词
Infrared spectroscopy; Amorphous carbon; Acetylene; Methane; Plasma; INTERNAL-REFLECTION GEOMETRY; DIAMOND-LIKE CARBON; INFRARED-SPECTROSCOPY; HYDROGENATED CARBON; METHANE PLASMA; GLOW-DISCHARGES; SI SURFACE; GROWTH; EVOLUTION; COATINGS;
D O I
10.1016/j.tsf.2009.11.033
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We compared the deposition process of an amorphous carbon film using acetylene as a source gas with the deposition process using methane. The process was investigated by using infrared absorption spectroscopy in multiple internal reflection geometry (MIR-IRAS). The infrared spectra showed that sp(3)-hydrocarbon species was observed in both cases: on the other hand, the sp- and sp(2)-carbon and/or hydrocarbon species was clearly observed in the film deposited using acetylene. Moreover, we observed the changes in predominant adsorbed species with film thickness in both cases; these facts suggest that an amorphous carbon film grows with the structural changes of adsorbed species in both deposition processes. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:3497 / 3501
页数:5
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