The effect of coalescence on threading dislocations in GaN films

被引：3

作者：

Liu, Yun ^{[1
]}

Zhang, Jia ^{[2
]}

机构：

[1] Norwegian Univ Sci & Technol, Dept Phys, N-7491 Trondheim, Norway

[2] Univ S China, Sch Mech Engn, Hengyang 421001, Peoples R China

来源：

SCRIPTA MATERIALIA | 2010年 / 63卷 / 01期

关键词：

GaN; Dislocation; Atomic force microscopy (AFM); X-ray diffraction (XRD); MOVPE-GROWN GAN; GALLIUM NITRIDE; SURFACE; MECHANISMS; SAPPHIRE; DEFECTS;

D O I：

10.1016/j.scriptamat.2010.03.025

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effect of the coalescence of islands on threading dislocations (TDs) in GaN films (300 nm thick) grown on non-annealed and annealed sapphire substrates has been studied. Atomic force microscopy measurements show that the a-type TD density first decreases and then increases during the coalescence process, while the densities of (a + c)- and c-type TDs decrease as coalescence proceeds. X-ray diffraction data indicate that the lattice tilt of GaN films is greatly reduced by coalescence while the change in twist depends on the degree of coalescence. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：109 / 112

页数：4

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