Graphite Nanocomposite Substrates for Improved Performance of Flexible, High-Power AlGaN/GaN Electronic Devices

被引:4
作者
Burzynski, Katherine M. [1 ,2 ,5 ]
Glavin, Nicholas R. [1 ]
Snure, Michael [2 ]
Motala, Michael J. [1 ,3 ]
Ferguson, John [1 ]
Blanton, Eric [4 ]
Heckman, Emily [2 ]
Muratore, Christopher [5 ]
机构
[1] Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
[2] Air Force Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA
[3] UES Inc, Beavercreek, OH 45431 USA
[4] KBR, Beavercreek, OH 45431 USA
[5] Univ Dayton, Dept Chem & Mat Engn, Dayton, OH 45469 USA
关键词
flexible electronics; thermal management; nanocomposite; PDMS; AlGaN/GaN;
D O I
10.1021/acsaelm.0c01063
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-power, flexible electronic devices require substrates that effectively dissipate heat while maintaining mechanical compliance. Nanocomposite substrates with similar to 20 mu m graphite nanoplatelets were incorporated into a polydimethylsiloxane (PDMS) matrix to improve heat transfer from electronic devices and provide a platform for integration into diverse and useful form factors. The composite substrate material exhibited a 9x increase in thermal conductivity (from 0.2 to 1.8 W m(-1) K-1) compared to PDMS while maintaining comparable levels of mechanical flexibility. Thinned 2-mu m AlGaN/GaN high electron mobility transistors were directly transferred without an adhesive to the composite substrate from the sapphire growth substrate to investigate the impact of the underlying substrate properties on device performance. The devices on composite substrates exhibit a high DC operation power of 6 W mm(-1) and were able to withstand cyclic bending over a 15 mm bend radius with no indication of performance degradation, highlighting the nanocomposite substrate as a suitable means to more fully realize the benefits of high-power, flexible devices.
引用
收藏
页码:1228 / 1235
页数:8
相关论文
共 69 条
  • [21] GaN Integration Technology, an Ideal Candidate for High-Temperature Applications: A Review
    Hassan, Ahmad
    Savaria, Yvon
    Sawan, Mohamad
    [J]. IEEE ACCESS, 2018, 6 : 78790 - 78802
  • [22] Hatano M., 2010, 2010 INT C COMP SEM, P4
  • [23] Thermal and electrical conduction behavior of alumina and multiwalled carbon nanotube incorporated poly(dimethyl siloxane)
    Hong, Jinho
    Lee, Jeongwoo
    Jung, Dongsoo
    Shim, Sang Eun
    [J]. THERMOCHIMICA ACTA, 2011, 512 (1-2) : 34 - 39
  • [24] Mechanical characterization of bulk Sylgard 184 for microfluidics and microengineering
    Johnston, I. D.
    McCluskey, D. K.
    Tan, C. K. L.
    Tracey, M. C.
    [J]. JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2014, 24 (03)
  • [25] SiC and GaN devices - wide bandgap is not all the same
    Kaminski, Nando
    Hilt, Oliver
    [J]. IET CIRCUITS DEVICES & SYSTEMS, 2014, 8 (03) : 227 - 236
  • [26] Thermal Percolation Threshold and Thermal Properties of Composites with High Loading of Graphene and Boron Nitride Fillers
    Kargar, Fariborz
    Barani, Zahra
    Salgado, Ruben
    Debnath, Bishwajit
    Lewis, Jacob S.
    Aytan, Ece
    Lake, Roger K.
    Balandin, Alexander A.
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (43) : 37555 - 37565
  • [27] Stretchable and foldable silicon integrated circuits
    Kim, Dae-Hyeong
    Ahn, Jong-Hyun
    Choi, Won Mook
    Kim, Hoon-Sik
    Kim, Tae-Ho
    Song, Jizhou
    Huang, Yonggang Y.
    Liu, Zhuangjian
    Lu, Chun
    Rogers, John A.
    [J]. SCIENCE, 2008, 320 (5875) : 507 - 511
  • [28] A wearable thermoelectric generator fabricated on a glass fabric
    Kim, Sun Jin
    We, Ju Hyung
    Cho, Byung Jin
    [J]. ENERGY & ENVIRONMENTAL SCIENCE, 2014, 7 (06) : 1959 - 1965
  • [29] Kirschman R., 1998, HIGH TEMPERATURE ELE, V8, P69
  • [30] Kirschman R., 1999, HIGH TEMPERATURE ELE, V17, P48