Ferroelastic Strain-Mediated Nonvolatile Tuning of Perpendicular Magnetic Anisotropy in (Co/Pt)3/(111) Pb(Mg1/3Nb2/3)O3-PbTiO3 Multiferroic Heterostructures

被引:4
作者
Peng, Bin
Feng, Mengmeng
Yang, Qu
Zhao, Shishun
Zhang, Yijun
Zhou, Ziyao
Liu, Ming [1 ]
机构
[1] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Shaanxi, Peoples R China
基金
中国博士后科学基金;
关键词
Magneto-electronics; ferroelastic domain; multiferroic heterostructure; perpendicular magnetic anisotropy; ELECTRIC-FIELD; FERROMAGNETIC-RESONANCE; REVERSAL; MULTILAYERS; DEVICES; FILMS;
D O I
10.1109/LMAG.2017.2721925
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nonvolatile control of perpendicular magnetic anisotropy (PMA) is of great technological importance for low-power spintronic devices. In this study, we successfully achieved ferroelastic strain-mediated nonvolatile tuning of PMA at room temperature in (Co/Pt)(3)/(1 1 1) Pb(Mg1/3Nb2/3)O-3-PbTiO3 multiferroic heterostructures. Electric field control of magnetic anisotropy was qualitatively studied by ferromagnetic resonance. The anisotropy could be reversibly flipped between low and high perpendicular states by electric field impulses. The application of a negative electric field to positively poled Pb(Mg1/3Nb2/3)O-3-PbTiO3 resulted in a significant enhancement of PMA up to 250 Oe, in which nonvolatile modulation contributed more than 150 Oe. The nonvolatile behavior is due to non-180 degrees ferroelastic domain switching in (1 1 1) Pb(Mg1/3Nb2/3)O-3-PbTiO3 as revealed by X-ray diffraction. Ferroelastic domain switching in multiferroic heterostructures is an effective way to nonvolatilely modulate PMA that will enable the realization of high-density and power-efficient spintronic memory.
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页数:5
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