Quantum cascade lasers emitting near 2.6 μm

被引：125

作者：

Cathabard, O. ^{[1
]}

Teissier, R. ^{[1
]}

Devenson, J. ^{[1
]}

Moreno, J. C. ^{[1
]}

Baranov, A. N. ^{[1
]}

机构：

[1] Univ Montpellier 2, CNRS, Inst Elect Sud, UMR5214, F-34095 Montpellier, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 14期

关键词：

aluminium compounds; III-V semiconductors; indium compounds; quantum cascade lasers; WAVELENGTH;

D O I：

10.1063/1.3385778

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum cascade lasers (QCLs) emitting at wavelengths as short as 2.63-2.65 mu m are demonstrated. The InAs/AlSb QCL design was optimized to weaken carrier leakage into the L-valley by reducing coupling between the active InAs quantum wells. The lasers with HR-coated facets operated up to 175 K.

引用

页数：3

共 14 条

[1] Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency [J].

Bai, Y. ;

Slivken, S. ;

Darvish, S. R. ;

Razeghi, M. .

APPLIED PHYSICS LETTERS, 2008, 93 (02)

[2] Short wavelength intersubband emission from InAs/AlSb quantum cascade structures [J].

Barate, D ;

Teissier, R ;

Wang, Y ;

Baranov, AN .

APPLIED PHYSICS LETTERS, 2005, 87 (05)

[3] InAs/AlSb quantum cascade lasers emitting at 2.75-2.97 μm [J].

Devenson, J. ;

Cathabard, O. ;

Teissier, R. ;

Baranov, A. N. .

APPLIED PHYSICS LETTERS, 2007, 91 (25)

[4] InAs/AlSb quantum cascade lasers emitting below 3 μm [J].

Devenson, J. ;

Teissier, R. ;

Cathabard, O. ;

Baranova, A. N. .

APPLIED PHYSICS LETTERS, 2007, 90 (11)

[5] Very short wavelength (λ=3.1-3.3 μm) quantum cascade lasers [J].

Devenson, J. ;

Barate, D. ;

Cathabard, O. ;

Teissier, R. ;

Baranov, A. N. .

APPLIED PHYSICS LETTERS, 2006, 89 (19)

[6] Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs [J].

Faist, J ;

Capasso, F ;

Sivco, DL ;

Hutchinson, AL ;

Chu, SNG ;

Cho, AY .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :680-682

[7] 3 W continuous-wave room temperature single-facet emission from quantum cascade lasers based on nonresonant extraction design approach [J].

Lyakh, A. ;

Maulini, R. ;

Tsekoun, A. ;

Go, R. ;

Pfluegl, C. ;

Diehl, L. ;

Wang, Q. J. ;

Capasso, Federico ;

Patel, C. Kumar N. .

APPLIED PHYSICS LETTERS, 2009, 95 (14)

[8] Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure [J].

Marko, Igor P. ;

Adams, Alfred R. ;

Sweeney, Stephen J. ;

Teissier, Roland ;

Baranov, Alexei N. ;

Tomic, Stanko .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (03) :512-515

[9] Improved performance of In0.6Ga0.4As/AlAs0.67Sb0.33/InP quantum cascade lasers by introduction of AlAs barriers in the active regions [J].

Revin, D. G. ;

Cockburn, J. W. ;

Steer, M. J. ;

Airey, R. J. ;

Hopkinson, M. ;

Krysa, A. B. ;

Wilson, L. R. ;

Menzel, S. .

APPLIED PHYSICS LETTERS, 2007, 91 (05)

[10] InGaAs/AlAsSb/InP quantum cascade lasers operating at wavelengths close to 3 μm [J].

Revin, D. G. ;

Cockburn, J. W. ;

Steer, M. J. ;

Airey, R. J. ;

Hopkinson, M. ;

Krysa, A. B. ;

Wilson, L. R. ;

Menzel, S. .

APPLIED PHYSICS LETTERS, 2007, 90 (02)

← 1 2 →