Terahertz Emission and Ultrafast Carrier Dynamics of Ar-Ion Implanted Cu(In,Ga)Se2 Thin Films

被引：2

作者：

Kang, Chul ^{[1
]}

Lee, Gyuseok ^{[1
,2
]}

Lee, Woo-Jung ^{[3
]}

Cho, Dae-Hyung ^{[3
]}

Maeng, Inhee ^{[1
,4
]}

Chung, Yong-Duck ^{[3
,5
]}

Kee, Chul-Sik ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Adv Photon Res Inst, Integrated Opt Lab, Gwangju 61105, South Korea

[2] Korea Food Res Inst, Res Grp Consumer Safety, Jeonju 55365, South Korea

[3] ICT Mat Technol Res Lab, Elect & Telecommun Res Inst, Daejeon 34129, South Korea

[4] Yonsei Univ, Coll Med, Med Convergence Res Inst, YUHS KRIBB, Seoul 03722, South Korea

[5] Korea Univ Sci & Technol, Dept Adv Device Technol, Daejeon 34113, South Korea

来源：

CRYSTALS | 2021年 / 11卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

terahertz; ultrafast; CIGS; carrier dynamics;

D O I：

10.3390/cryst11040411

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated THz emission from Ar-ion-implanted Cu(In,Ga)Se-2 (CIGS) films. THz radiation from the CIGS films increases as the density of implanted Ar ions increases. This is because Ar ions contribute to an increase in the surface surge current density. The effect of Ar-ion implantation on the carrier dynamics of CIGS films was also investigated using optical pump THz probe spectroscopy. The fitted results imply that implanted Ar ions increase the charge transition of intra-and carrier-carrier scattering lifetimes and decrease the bandgap transition lifetime.

引用

页数：6

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