Wideband Phase-Compensated VGA with PMOS Switch in 40-nm CMOS for 120-GHz Band

被引：0

作者：

Jang, Tae Hwan ^{[1
,2
]}

Kim, Seung Hun ^{[2
]}

Byeon, Chul Woo ^{[3
]}

Park, Chul Soon ^{[2
]}

机构：

[1] Samsung Adv Inst Technol, Nano Elect Lab, Suwon, South Korea

[2] Korea Adv Inst Sci & Technol KAIST, Dept Elect Engn, Daejeon 34141, South Korea

[3] Wonkwang Univ, Dept Elect Engn, Iksan 54538, South Korea

来源：

JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES | 2021年 / 42卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

CMOS; 120; GHz; Variable gain amplifier; PMOS;

D O I：

10.1007/s10762-021-00794-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a 120-GHz wideband phase-compensated variable gain amplifier (VGA) with a p-type metal-oxide-semiconductor (PMOS) switch using a 40-nm CMOS process. By applying a PMOS switch to the common source (CS) amplifier, the gain of the CS amplifier can be controlled by as much as 6.1 dB with 2 degrees phase variations in 15.1-GHz bandwidth ranging from 100.9 to 115 GHz. The measured gain and 3-dB bandwidth of the VGA are 19.1 dB and 33.8 GHz for high-gain state, and 13 dB and 44.2 GHz for low gain state, respectively. Meanwhile, the DC power consumption in the high-gain state is 45 mW, and the OP1dB is -2.7 dBm.

引用

页码：514 / 524

页数：11

共 40 条

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