Manganese distribution in ferromagnetic gallium manganese nitride epitaxial film grown by plasma enhanced molecular beam epitaxy

被引：2
作者：
Chang, JY
Kim, GH
Lee, WY
Myoung, JM
机构：
[1] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 130650, South Korea
[2] Korea Adv Inst Sci & Technol, NanoMat Res Ctr, Seoul 130650, South Korea
[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
来源：
THIN SOLID FILMS | 2005年 / 472卷 / 1-2期
关键词：
gallium nitride (GaN); ferromagnetism; (Ga; Mn)N; lattice parameter; convergent beam electron diffraction (CBED);
D O I：
10.1016/j.tsf.2004.06.144
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Systematic transmission electron microscopy (TEM) study was performed to determine the change in lattice parameter of epitaxial Mn-doped GaN films with low Mn contents (0.06-0.5 at.%) grown by plasma-enhanced molecular beam epitaxy (PEMBE) by which added Mn distribution can be investigated. Secondary ion mass spectroscopy (SIMS) reveals that the Mn profiles for the films are uniform throughout the entire thickness range of 0.7-1.0 mum with no appreciable segregation. The lattice parameter for the plasma-enhanced molecular beam epitaxy grown GaMnN is found to be a=0.31865 nm, larger than those for the metal organic chemical vapor deposition grown GaN used as a substrate and plasma-enhanced molecular beam epitaxy grown GaN on metal organic chemical vapor deposition GaN, reflecting the expansion of unit lattice due to Mn ion substitution for Ga ion in the wurtzite (GaxMn1-x)N structure. Lattice parameter measurement is believed to give useful information on the crystalline quality of (GaxMn1-x)N structure grown by plasma-enhanced molecular beam epitaxy. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：144 / 149
页数：6
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