High speed Si/SiGe and Ge/SiGe MODFETs

被引：1

作者：

Aniel, F ^{[1
]}

Ensico-Aguilar, M ^{[1
]}

Zerounian, N ^{[1
]}

Crozat, P ^{[1
]}

Adde, R ^{[1
]}

Hackbarth, T ^{[1
]}

Herzog, JH ^{[1
]}

König, U ^{[1
]}

机构：

[1] Paris S Univ, Inst Elect, F-91405 Orsay, France

来源：

2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2003年

关键词：

SiGe; MODFET; HF noise; S-parameters; self-heating; 2D-simulation;

D O I：

10.1109/SMIC.2003.1196661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high frequency and noise performances of n- and p- SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.

引用

页码：29 / 32

页数：4

共 50 条

[41] Carry Chains for Ultra High-Speed SiGe HBT Adders [J].

Gutin, Alexey ;

Jacob, Philip ;

Chu, Michael ;

Belemjian, Paul M. ;

LeRoy, Mitchell R. ;

Kraft, Russell P. ;

McDonald, John F. .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2011, 58 (09) :2201-2210

[42] BTI Reliability of high-mobility channel devices: SiGe, Ge and InGaAs [J].

Franco, J. ;

Kaczer, B. ;

Roussel, Ph. J. ;

Cho, M. ;

Grasser, T. ;

Mitard, J. ;

Arimura, H. ;

Witters, L. ;

Cott, D. ;

Waldron, N. ;

Zhou, D. ;

Vais, A. ;

Lin, D. ;

Alian, A. ;

Pourghaderi, M. A. ;

Martens, K. ;

Sioncke, S. ;

Collaert, N. ;

Thean, A. ;

Heyns, M. ;

Groeseneken, G. .

2014 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT (IIRW), 2014, :53-57

[43] High quality strained Si/SiGe substrates for CMOS and optical devices [J].

Weber, J ;

Nebrich, L ;

Bensch, F ;

Neumeier, K ;

Vogg, G ;

Wieland, R ;

Bonfert, D ;

Ramm, P .

MICROELECTRONIC ENGINEERING, 2005, 82 (3-4) :215-220

[44] Noise in Si and SiGe MOSFETs with high-k gate dielectrics [J].

von Haartman, M ;

Malm, BG ;

Hellström, PE ;

Östling, M .

NOISE AND FLUCTUATIONS, 2005, 780 :225-230

[45] Self-organized periodic arrays of SiGe wires and Ge islands on vicinal Si substrates [J].

Brunner, K ;

Zhu, J ;

Miesner, C ;

Abstreiter, G ;

Kienzle, O ;

Ernst, F .

PHYSICA E, 2000, 7 (3-4) :881-886

[46] Investigation of the local Ge concentration in Si/SiGe nanostructures by convergent-beam electron diffraction [J].

Ruh, E. ;

Mueller, E. ;

Mussler, G. ;

Sigg, H. C. ;

Gruetzmacher, D. .

ULTRAMICROSCOPY, 2010, 110 (10) :1255-1266

[47] Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate [J].

Kutsukake, K ;

Usami, N ;

Fujiwara, K ;

Ujihara, T ;

Sazaki, G ;

Nakajima, K ;

Zhang, BP ;

Segawa, Y .

APPLIED SURFACE SCIENCE, 2004, 224 (1-4) :95-98

[48] Serial and Parallel Si, Ge, and SiGe Direct-Write with Scanning Probes and Conducting Stamps [J].

Vasko, Stephanie E. ;

Kapetanovic, Adnan ;

Talla, Vamsi ;

Brasino, Michael D. ;

Zhu, Zihua ;

Scholl, Andreas ;

Torrey, Jessica D. ;

Rolandi, Marco .

NANO LETTERS, 2011, 11 (06) :2386-2389

[49] Mobility enhancement in strained ge heterostructures by planarization of SiGe buffer layers grown on Si substrates [J].

Sawano, K ;

Abe, Y ;

Satoh, H ;

Nakagawa, K ;

Shiraki, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (42-45) :L1320-L1322

[50] Fabrication of SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate [J].

Kutsukake, K ;

Usami, N ;

Fujiwara, K ;

Ujihara, T ;

Sazaki, G ;

Zhang, BP ;

Segawa, Y ;

Nakajima, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (3A) :L232-L234

← 1 2 3 4 5 →