High speed Si/SiGe and Ge/SiGe MODFETs

被引：1

作者：

Aniel, F ^{[1
]}

Ensico-Aguilar, M ^{[1
]}

Zerounian, N ^{[1
]}

Crozat, P ^{[1
]}

Adde, R ^{[1
]}

Hackbarth, T ^{[1
]}

Herzog, JH ^{[1
]}

König, U ^{[1
]}

机构：

[1] Paris S Univ, Inst Elect, F-91405 Orsay, France

来源：

2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2003年

关键词：

SiGe; MODFET; HF noise; S-parameters; self-heating; 2D-simulation;

D O I：

10.1109/SMIC.2003.1196661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high frequency and noise performances of n- and p- SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.

引用

页码：29 / 32

页数：4

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