High speed Si/SiGe and Ge/SiGe MODFETs

被引:1
|
作者
Aniel, F [1 ]
Ensico-Aguilar, M [1 ]
Zerounian, N [1 ]
Crozat, P [1 ]
Adde, R [1 ]
Hackbarth, T [1 ]
Herzog, JH [1 ]
König, U [1 ]
机构
[1] Paris S Univ, Inst Elect, F-91405 Orsay, France
来源
2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2003年
关键词
SiGe; MODFET; HF noise; S-parameters; self-heating; 2D-simulation;
D O I
10.1109/SMIC.2003.1196661
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The high frequency and noise performances of n- and p- SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.
引用
收藏
页码:29 / 32
页数:4
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