Design and Realization of Ferroelectric Thin Film Physical Parameters Test System Based on Electronic Information Technology

被引:0
作者
Hou, Yuanshao [1 ]
机构
[1] Henan Ind & Trade Vocat Coll, Dept Mech & Elect Engn, Zhengzhou, Henan, Peoples R China
关键词
Electronic information technology; ferroelectric thin film; parameter test; system design; DIELECTRIC-PROPERTIES; ENERGY-STORAGE; ALL-OXIDE; POLARIZATION; MODEL; GLASS;
D O I
10.1080/10584587.2022.2074234
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ferroelectric thin film materials are constantly used in our lives. When testing the physical parameters of the ferroelectric film, the thickness of the film is very small or only nanometers, which will bring great difficulties to the accuracy and sensitivity of the test. To understand the role of electronic information technology in the measurement of the physical parameters of ferroelectric thin films, this paper adopts the sweep field method and the sweep frequency method to test the parameters of the ferroelectric thin film. The system uses PZT film as the test material to complete the electrical hysteresis loop measurement experiment in an extremely clean environment. The system hardware circuit is designed, which can complete the measurement of the electrical hysteresis loop, the output of the sinusoidal signal, the data acquisition, and the power supply of the system. The research results show that the parameters of the traditional PZT film material change greatly during the test. The thickness of the improved PLSZT film is about 10% thinner than that of the PZT film. The result can be better in the parameter test.
引用
收藏
页码:229 / 247
页数:19
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