Design and Realization of Ferroelectric Thin Film Physical Parameters Test System Based on Electronic Information Technology

被引:0
作者
Hou, Yuanshao [1 ]
机构
[1] Henan Ind & Trade Vocat Coll, Dept Mech & Elect Engn, Zhengzhou, Henan, Peoples R China
关键词
Electronic information technology; ferroelectric thin film; parameter test; system design; DIELECTRIC-PROPERTIES; ENERGY-STORAGE; ALL-OXIDE; POLARIZATION; MODEL; GLASS;
D O I
10.1080/10584587.2022.2074234
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ferroelectric thin film materials are constantly used in our lives. When testing the physical parameters of the ferroelectric film, the thickness of the film is very small or only nanometers, which will bring great difficulties to the accuracy and sensitivity of the test. To understand the role of electronic information technology in the measurement of the physical parameters of ferroelectric thin films, this paper adopts the sweep field method and the sweep frequency method to test the parameters of the ferroelectric thin film. The system uses PZT film as the test material to complete the electrical hysteresis loop measurement experiment in an extremely clean environment. The system hardware circuit is designed, which can complete the measurement of the electrical hysteresis loop, the output of the sinusoidal signal, the data acquisition, and the power supply of the system. The research results show that the parameters of the traditional PZT film material change greatly during the test. The thickness of the improved PLSZT film is about 10% thinner than that of the PZT film. The result can be better in the parameter test.
引用
收藏
页码:229 / 247
页数:19
相关论文
共 29 条
[1]   Multiferroic BaCoF4 in Thin Film Form: Ferroelectricity, Magnetic Ordering, and Strain [J].
Borisov, Pavel ;
Johnson, Trent A. ;
Garcia-Castro, Andres Camilo ;
Amit, K. C. ;
Schrecongost, Dustin ;
Cen, Cheng ;
Romero, Aldo H. ;
Lederman, David .
ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (04) :2694-2703
[2]   Ferroelectric State in an α-Nd2WO6 Polymorph Stabilized in a Thin Film [J].
Carlier, Thomas ;
Chambrier, Marie-Helene ;
Da Costa, Antonio ;
Blanchard, Florent ;
Denneulin, Thibaud ;
Letiche, Manon ;
Roussel, Pascal ;
Desfeux, Rachel ;
Ferri, Anthony .
CHEMISTRY OF MATERIALS, 2020, 32 (17) :7188-7200
[3]   Superior ferroelectric photovoltaic properties in Fe -modified (Pb,La) (Zr,Ti)O3 thin film by improving the remnant polarization and reducing the band gap [J].
Chen, Guang ;
Zhang, Ying ;
Zhang, Qingfeng ;
Lu, Yinmei ;
He, Yunbin .
CERAMICS INTERNATIONAL, 2020, 46 (10) :15061-15065
[4]   Finite Element Analysis Model on Ultrasonic Phased Array Technique for Material Defect Time of Flight Diffraction Detection [J].
Chen, Hanxin ;
Fan, Dongliang ;
Huang, Jinmin ;
Huang, Wenjian ;
Zhang, Guangyu ;
Huang, Lang .
SCIENCE OF ADVANCED MATERIALS, 2020, 12 (05) :665-675
[5]   Temperature dependence of ferroelectricity and domain switching behavior in Pb(Zr0.3Ti0.7)O3 ferroelectric thin films [J].
Chen, Xi ;
Qiao, Xiaojun ;
Zhang, Liaoyuan ;
Zhang, Jing ;
Zhang, Qicheng ;
He, Jian ;
Mu, Jiliang ;
Hou, Xiaojuan ;
Chou, Xiujian ;
Geng, Wenping .
CERAMICS INTERNATIONAL, 2019, 45 (14) :18030-18036
[6]   Misfit strain relaxations of (101)-oriented ferroelectric PbTiO3/(La, Sr)(Al, Ta)O3 thin film systems [J].
Feng, Yanpeng ;
Tang, Yunlong ;
Zhu, Yinlian ;
Zou, Minjie ;
Ma, Xiuliang .
JOURNAL OF MATERIALS RESEARCH, 2018, 33 (24) :4156-4164
[7]   Simulation of proton radiation on electrocaloric effect in BaTiO3 ferroelectric thin film [J].
Guo, W. X. ;
Ouyang, X. P. ;
Li, B. ;
Liu, L. Y. ;
Wang, J. B. ;
Zhong, X. L. ;
Guo, H. X. ;
Wang, F. .
MATERIALS LETTERS, 2018, 215 :318-320
[8]   High-Performance Solution-Processed Zinc-Tin-Oxide Thin-Film Transistors Employing Ferroelectric Copolymers Fabricated at Low Temperature for Transparent Flexible Displays [J].
Ha, Tae-Jun .
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (12) :1586-1589
[9]   Transconductance Amplification by the Negative Capacitance in Ferroelectric-Gated P3HT Thin-Film Transistor [J].
Jo, Jaesung ;
Kim, Min Gee ;
Lee, Hyunjae ;
Choi, Hyunwoo ;
Shin, Changhwan .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (12) :4974-4979
[10]   Simultaneous normal - Anomalous dielectric dispersion and room temperature ferroelectricity in CBD perovskite BaTiO3 thin films [J].
Khan, Sidra ;
Humera, Nudrat ;
Niaz, Saba ;
Riaz, Saira ;
Atiq, Shahid ;
Naseem, Shahzad .
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 2020, 9 (05) :11439-11452