Direct measurement of Vth fluctuation caused by impurity positioning

被引：18

作者：

Tanaka, T ^{[1
]}

Usuki, T ^{[1
]}

Momiyama, Y ^{[1
]}

Sugii, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Quantum Electron Devices Lab, Atsugi, Kanagawa 2430197, Japan

来源：

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2000年

关键词：

D O I：

10.1109/VLSIT.2000.852800

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper studies a local fluctuation or channel impurity on the source edge. Our direct measurement successfully separates the local (intra-FET) and global (inter-FET) factors. The quite local region (much less than L-eff X W-eff) significantly affects V-th distribution in a high Sid, which exceeds the global factor in the smallest MOSFETs. The local fluctuation inevitably affects MOSFETs in SRAM is cells even though global fluctuation is reduced by process optimization.

引用

页码：136 / 137

页数：2