Interband and Intraband Optical Transitions in Mercury Chalcogenide Colloidal Quantum Dots

被引:0
|
作者
Tang, Xin [1 ]
Wu, Guangfu [1 ]
Lai, King Wai Chiu [1 ]
机构
[1] City Univ Hong Kong, Dept Mech & Biomed Engn, Hong Kong, Hong Kong, Peoples R China
关键词
ABSORPTION;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We study the optical transitions in mercury chalcogenide colloidal quantum dots (CQDs) by using Fourier transform infrared spectrometer. The optical absorption measurements revealed distinct optical transition processes in mercury telluride (HgTe) CQDs and mercury selenium (HgSe) CQDs. The results show that the spectral absorbance of HgTe CQDs is broadband, which is originated from the interband optical transition between valence band to conduction band, while that of HgSe CQDs is narrowband. And we speculate that the narrowband absorption is resulted from the intraband transition in HgSe CQDs. Furthermore, both the interband energy gaps of HgTe CQDs and intraband energy gaps of HgSe CQDs have been estimated based on the spectral absorbance. The extracted energy gaps are in good agreement with the calculated values by two-band Kroning-Penny model.
引用
收藏
页码:641 / 644
页数:4
相关论文
共 50 条
  • [41] Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots
    Antonov, A. V.
    Daniltsev, V. M.
    Drozdov, M. N.
    Drozdov, Yu. N.
    Moldavskaya, L. D.
    Shashkin, V. I.
    SEMICONDUCTORS, 2012, 46 (11) : 1415 - 1417
  • [42] Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots
    A. V. Antonov
    V. M. Daniltsev
    M. N. Drozdov
    Yu. N. Drozdov
    L. D. Moldavskaya
    V. I. Shashkin
    Semiconductors, 2012, 46 : 1415 - 1417
  • [43] Reply to "Comment on 'HgS and HgS/CdS Colloidal Quantum Dots with Infrared Intraband Transitions and Emergence of a Surface Plasmon'"
    Shen, Guohua
    Guyot-Sionnest, Philippe
    JOURNAL OF PHYSICAL CHEMISTRY C, 2016, 120 (50): : 28903 - 28904
  • [44] Effect of geometry and composition on the intraband transitions of holes in quantum dots
    Singh, Satish Kumar
    Kumar, Jitendra
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (24)
  • [45] OSCILLATOR-STRENGTHS FOR OPTICAL DIPOLE INTERBAND-TRANSITIONS IN SEMICONDUCTOR QUANTUM DOTS
    PAN, JL
    PHYSICAL REVIEW B, 1992, 46 (07): : 4009 - 4019
  • [46] Mid- and Long-Wave Infrared Optoelectronics via Intraband Transitions in PbS Colloidal Quantum Dots
    Ramiro, Inigo
    Ozdemir, Onur
    Christodoulou, Sotirios
    Gupta, Shuchi
    Dalmases, Mariona
    Torre, Iacopo
    Konstantatos, Gerasimos
    NANO LETTERS, 2020, 20 (02) : 1003 - 1008
  • [47] Magneto-optical interband transitions in semiconductor quantum dots: Evidence for excitonic polarons
    Preisler, V.
    Grange, T.
    Ferreira, R.
    de Vaulchier, L. A.
    Guldner, Y.
    Teran, F. J.
    Potemski, M.
    Lemaitre, A.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 985 - +
  • [48] Emission directionality of electronic intraband transitions in stacked quantum dots
    Mittelstaedt, Alexander
    Greif, Ludwig A. Th
    Schliwa, Andrei
    PHYSICAL REVIEW B, 2021, 104 (11)
  • [49] Oscillator strength for intraband transitions in (In,Ga)As/GaAs quantum dots
    Stoleru, VG
    Towe, E
    APPLIED PHYSICS LETTERS, 2003, 83 (24) : 5026 - 5028
  • [50] 1.5-μm intraband transitions in PbSe quantum dots
    Okuno, T
    Ikezawa, M
    Masumoto, Y
    Hayes, GR
    Deveaud, B
    Lipovskii, AA
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (2A): : L123 - L125