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Ground state energy of electron-hole liquid in type-II (GaAs)m/(AlAs)m quantum wells
被引:2
作者:
Inagaki, A
[1
]
Katayama, S
[1
]
机构:
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan
关键词:
quantum wells;
semiconductor;
electron-hole liquid;
D O I:
10.1016/S0038-1098(02)00813-X
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
The ground state energy of quasi-two-dimensional electron-hole liquid (EHL) at zero temperature is calculated for type-II (GaAs)(m)/(AlAs)(m) (5 less than or equal to m less than or equal to 10) quantum wells (QWs). The correlation effects of Coulomb interaction are taken into account by a random phase approximation of Hubbard. Our EHL ground state energy per electron-hole pair is lower than the exciton energy calculated recently for superlattices, so we expected that EHL is more stable state than excitons at high excitation density. It is also demonstrated that the equilibrium density of EHL in type-II GaAs/AlAs QWs is of one order of magnitude larger than that in type-I GaAs/AlAs QWs. (C) 2003 Elsevier Science Ltd. All rights reserved.
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页码:337 / 340
页数:4
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