Group velocity dispersion in high-performance BH InAs/InP QD and InGaAsP/InP QW two-section passively mode-locked lasers

被引：5
作者：
Ding, Yunyun [1 ]
Rehbein, Wolfgang [1 ]
Moehrle, Martin [1 ]
Zander, Marlene [1 ]
Schell, Martin [1 ]
Kolpatzeck, Kevin [2 ]
Balzer, Jan C. [2 ]
机构：
[1] Fraunhofer Heinrich Hertz Inst, Einsteinufer 37, D-10587 Berlin, Germany
[2] Univ Duisburg Essen, Bismarckstr 81, D-47057 Duisburg, Germany
来源：
OPTICS EXPRESS | 2022年 / 30卷 / 14期
关键词：
QUANTUM; LOCKING;
D O I：
10.1364/OE.456823
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
High-performance buried heterostructure (BH) C-band InAs/InP quantum dot (QD) and L-band InGaAsP/InP quantum well (QW) two-section passively mode-locked lasers (MLLs) are investigated. From the irregularity of the longitudinal mode spacing in the comb spectra, we confirm that under stable passive mode locking, both devices have strong group velocity dispersion (GVD) and corresponding GVD-induced pulse width broadening. After compensation with anomalous dispersion fibers (SMF-28), short pulse trains with sub-ps pulse widths are achieved for both devices. This observation demonstrates our ability to generate high peak power sub-ps pulses using QD MLLs and QW MLLs for many photonic applications of optical communications. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码：24353 / 24361
页数：9
相关论文
共 23 条
  • [1] Monolithic and multi-GigaHertz mode-locked semiconductor lasers: Constructions, experiments, models and applications
    Avrutin, EA
    Marsh, JH
    Portnoi, EL
    [J]. IEE PROCEEDINGS-OPTOELECTRONICS, 2000, 147 (04): : 251 - 278
  • [2] Diels J.-C., 2006, ULTRASHORT LASER PUL, V2, pxvii
  • [3] Effect of the Shape of InAs Nanostructures on the Characteristics of InP-Based Buried Heterostructure Semiconductor Optical Amplifiers
    Franke, Dieter
    Kreissl, Jochen
    Rehbein, Wolfgang
    Wenning, Felix
    Kuenzel, Harald
    Pohl, Udo W.
    Bimberg, Dieter
    [J]. APPLIED PHYSICS EXPRESS, 2011, 4 (01)
  • [4] Ultrashort Pulse and High Power Mode-Locked Laser With Chirped InAs/InP Quantum Dot Active Layers
    Gao, Feng
    Luo, Shuai
    Ji, Hai-Ming
    Liu, Song-Tao
    Xu, Feng
    Lv, Zun-Ren
    Lu, Dan
    Ji, Chen
    Yang, Tao
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 28 (13) : 1481 - 1484
  • [5] Time-resolved amplified spontaneous emission in quantum dots
    Gomis-Bresco, J.
    Dommers-Voelkel, S.
    Schoeps, O.
    Kaptan, Y.
    Dyatlova, O.
    Bimberg, D.
    Woggon, U.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (25)
  • [6] Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 μm
    Heck, Martijn J. R.
    Bente, Erwin A. J. M.
    Smalbrugge, Barry
    Oei, Yok-Siang
    Smit, Meint K.
    Anantathanasarn, Sanguan
    Notzel, Richard
    [J]. OPTICS EXPRESS, 2007, 15 (25) : 16292 - 16301
  • [7] Passively Mode-Locked 4.6 and 10.5 GHz Quantum Dot Laser Diodes Around 1.55 μm With Large Operating Regime
    Heck, Martijn J. R.
    Renault, Amandine
    Bente, Erwin A. J. A.
    Oei, Yok-Siang
    Smit, Meint K.
    Eikema, Kjeld S. E.
    Ubachs, Wim
    Anantathanasarn, Sanguan
    Notzel, Richard
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (03) : 634 - 643
  • [8] Orthogonal control of the frequency comb dynamics of a mode-locked laser diode
    Holman, KW
    Jones, DJ
    Ye, J
    Ippen, EP
    [J]. OPTICS LETTERS, 2003, 28 (23) : 2405 - 2407
  • [9] Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers
    Hou, Lianping
    Haji, Mohsin
    Akbar, Jehan
    Qiu, Bocang
    Bryce, A. Catrina
    [J]. OPTICS LETTERS, 2011, 36 (06) : 966 - 968
  • [10] Modeling of Single-Section Quantum Dot Mode-Locked Lasers: Impact of Group Velocity Dispersion and Self Phase Modulation
    Jiao, Zhejing
    Zhang, Rong
    Zhang, Xiupu
    Liu, Jiaren
    Lu, Zhenguo
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2013, 49 (12) : 1008 - 1015
123