Influence of The Low-temperature AIN Interlayers on The Electrical Properties of AIGaN/GaN Heterostructure on Si Substrate

被引：0

作者：

He, Zhiyuan ^{[1
]}

Liu, Shaoqing ^{[1
]}

Hu, Jianyao ^{[1
]}

Xu, Huawei ^{[1
]}

Huang, Qingli ^{[1
]}

Liu, Qunxing ^{[1
]}

机构：

[1] MIIT, Res Inst 5, Guangzhou, Guangdong, Peoples R China

来源：

PROCEEDINGS OF 2016 IEEE ADVANCED INFORMATION MANAGEMENT, COMMUNICATES, ELECTRONIC AND AUTOMATION CONTROL CONFERENCE (IMCEC 2016) | 2016年

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

GaN; low-temperature AIN interlayer; AIGaN/GaN heterostructure; electrical properties; MOBILITY; SILICON; GAS;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, the electrical properties of AIGaNIGaN heterostructure grown on Si substrate with low-temperature AIN (LT-AIN) interlayers were investigated. Hall effect measurement was used to test the electrical properties of AIGaN/GaN heterostructure in all samples with different LT-AIN thickness. It is showed that the thickness of low-temperature AIN interlayers in the bufferlayer obviously effect the electrical properties of two-dimensional electron gas (2DEG) in the heterostructure channel. The sample with 15 nm LT-AIN interlayers reached the maximum electron mobility of 4090 cm2/Vs. Combined with XRD and AFM measurements, it is found that the dislocation density, surface roughness and stress conditions determined the electrical properties of 2DEG.

引用

页码：1298 / 1301

页数：4

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