Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application

被引：61
作者：
Laha, Apurba
Osten, H. J.
Fissel, A.
机构：
[1] Leibniz Univ Hannover, Inst Elect Mat & Devices, D-30167 Hannover, Germany
[2] Leibniz Univ Hannover, Informat Technol Lab, D-30167 Hannover, Germany
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 11期
关键词：
D O I：
10.1063/1.2713142
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report on the impact of interface layer composition on electrical properties of epitaxial Gd2O3 thin films on Si(001) substrates. The electrical properties of epitaxial Gd2O3 thin films were improved significantly by controlled modification of interface layer composition. The minimum capacitance equivalent thickness estimated for Pt/Gd2O3/Si metal oxide semiconductor structures was as low as 0.76 nm with leakage current density of 15 mA/cm(2) at (V-g-V-FB)=1 V. The corresponding density of interface states was found to be 2.3x10(12) cm(-2) eV(-1). The authors also find that a change in the interface layer composition significantly alters band alignment of Gd2O3 layer with respect to Si substrates. (c) 2007 American Institute of Physics.
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页数：3
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