Influence of microstructure and hydrogen concentration on amorphous silicon crystallization

被引：47
作者：
Budini, N. [1 ]
Rinaldi, P. A. [1 ]
Schmidt, J. A. [1 ,2 ]
Arce, R. D. [1 ,2 ]
Buitrago, R. H. [1 ,2 ]
机构：
[1] UNL CONICET, Inst Desarrollo Tecnol Ind Quim, Santa Fe, Argentina
[2] UNL, Fac Ingn Quim, Santa Fe, Argentina
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 18期
关键词：
Polycrystalline silicon; Hydrogenated amorphous silicon; Solid phase crystallization; CHEMICAL-VAPOR-DEPOSITION; A-SI-H; POLYCRYSTALLINE SILICON; SUBSTRATE-TEMPERATURE; THIN-FILMS; QUALITY; RECRYSTALLIZATION; PHASE; GLASS; DIFFUSION;
D O I：
10.1016/j.tsf.2010.04.029
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hydrogenated amorphous silicon samples were deposited on glass substrates at different temperatures by high frequency plasma-enhanced chemical vapor deposition. In this way, samples with different hydrogen concentrations and structures were obtained. The transition from an amorphous to a crystalline material, induced by a four-step thermal annealing sequence, has been followed. Effusion of hydrogen from the films plays an important role in the nucleation and growth mechanisms of crystalline silicon grains. Measurements of hydrogen concentrations, Raman scattering, X-ray diffraction and UV reflectance showed that an enhanced crystallization was obtained on samples deposited at lower substrate temperatures. A correlation between these measurements allows to analyze the evolution of structural properties of the samples. The presence of voids in the material, related to disorder in the amorphous matrix, results in a better quality of the resulting nanocrystalline silicon thin films. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：5349 / 5354
页数：6
相关论文
共 36 条
  • [1] Fabrication and characterisation of crystalline silicon thin-film materials for solar cells
    Aberle, Armin G.
    [J]. THIN SOLID FILMS, 2006, 511 (26-34) : 26 - 34
  • [2] Microstructure and photovoltaic performance of polycrystalline silicon thin films on temperature-stable ZnO:Al layers
    Becker, C.
    Ruske, F.
    Sontheimer, T.
    Gorka, B.
    Bloeck, U.
    Gall, S.
    Rech, B.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (08)
  • [3] Diffusion and evolution of hydrogen in hydrogenated amorphous and microcrystalline silicon
    Beyer, W
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 78 (1-4) : 235 - 267
  • [4] Absorption strengths of Si-H vibrational modes in hydrogenated silicon
    Beyer, W
    Ghazala, MSA
    [J]. AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 : 601 - 606
  • [5] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
  • [6] THE CHARACTERIZATION OF HETERO-EPITAXIAL SILICON
    CULLEN, GW
    ABRAHAMS, MS
    CORBOY, JF
    DUFFY, MT
    HAM, WE
    JASTRZEBSKI, L
    SMITH, RT
    BLUMENFELD, M
    HARBEKE, G
    LAGOWSKI, J
    [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 281 - 295
  • [7] ROLE OF MOBILE HYDROGEN IN THE AMORPHOUS-SILICON RECRYSTALLIZATION
    GODET, C
    LAYADI, N
    CABARROCAS, PRI
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (23) : 3146 - 3148
  • [8] ASSESSMENT OF THE SURFACE QUALITY OF SIMOX WAFERS BY UV REFLECTANCE
    HARBEKE, G
    JASTRZEBSKI, L
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (02) : 696 - 699
  • [9] RECRYSTALLIZATION OF AMORPHIZED POLYCRYSTALLINE SILICON FILMS ON SIO2 - TEMPERATURE-DEPENDENCE OF THE CRYSTALLIZATION PARAMETERS
    IVERSON, RB
    REIF, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 1675 - 1681
  • [10] Dynamics of the excimer laser annealing of hydrogenated amorphous silicon thin films
    Ivlev, G
    Gatskevich, E
    Cháb, V
    Stuchlík, J
    Vorlícek, V
    Kocka, J
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (04) : 498 - 500
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