Fully-depleted SOI CMOS for analog applications

被引：93

作者：

Colinge, JP ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 05期

关键词：

analog integrated circuits; HF amplifiers; microwave circuits; random access memories; silicon-on-insulator technology; SIMOX; thermal factors;

D O I：

10.1109/16.669511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fully-depleted (FD) SOI MOSFET's offer near-ideal properties for analog applications. In particular their high transconductance to drain current ratio allows one to obtain a higher gain than from bulk de,ices, and the reduced body effect permits one to fabricate more efficient pass gates. The excellent behavior of SOI MOSFET's at high temperature or at gigahertz frequencies is outlined as well.

引用

页码：1010 / 1016

页数：7

共 40 条

[1]

Agarwal A. K., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P687, DOI 10.1109/IEDM.1991.235329

[2] MICROWAVE PERFORMANCE OF SOI N-MOSFETS AND COPLANAR WAVE-GUIDES [J].

CAVIGLIA, AL ;

POTTER, RC ;

WEST, LJ .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (01) :26-27

[3]

CHATTERJEE A, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P87, DOI 10.1109/IEDM.1994.383457

[4] Comparison of TiSi2, CoSi2, and NiSi for thin-film silicon-on-insulator applications [J].

Chen, J ;

Colinge, JP ;

Flandre, D ;

Gillon, R ;

Raskin, JP ;

Vanhoenacker, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (07) :2437-2442

[5]

Colinge J.P., 1997, Silicon-On-Insulator Technology: Materials to VLSI

[6]

COLINGE JP, 1996, P 1996 IEEE INT SOI, P128

[7]

COLINGE JP, 1995, IEEE INT SOL STAT CI, P194

[8] MICROWAVE PERFORMANCE OF OPTICALLY FABRICATED T-GATE THIN-FILM SILICON-ON-SAPPHIRE BASED MOSFETS [J].

DELAHOUSSAYE, PR ;

CHANG, CE ;

OFFORD, B ;

IMTHURN, G ;

JOHNSON, R ;

ASBECK, PM ;

GARCIA, GA ;

LAGNADO, I .

IEEE ELECTRON DEVICE LETTERS, 1995, 16 (06) :289-292

[9] Design of SOI CMOS operational amplifiers for applications up to 300 degrees C [J].

Eggermont, JP ;

DeCeuster, D ;

Flandre, D ;

Gentinne, B ;

Jespers, PGA ;

Colinge, JP .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1996, 31 (02) :179-186

[10]

EGGERMONT JP, 1995, P IEEE INT SOI C, P127

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