Quantum-dot superluminescent diodes with improved performance

被引：4
作者：
Andreeva, E. V.
Lapin, P. I.
Prokhorov, V. V.
Yakubovich, S. D.
机构：
[1] Superlum Diodes Ltd Liabil Co, Moscow 117454, Russia
[2] Tech Univ, Moscow State Inst Radio Engn Elect & Automat, Moscow 119454, Russia
来源：
QUANTUM ELECTRONICS | 2007年 / 37卷 / 04期
关键词：
superluminescent diodes; radiation efficiency; quantum dots;
D O I：
10.1070/QE2007v037n04ABEH013465
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is shown that optimisation of the structure of the active channel of quantum-dot InAs/AlGaAs/GaAs super-luminescent diodes (SLDs) provides a noticeable increase in their external quantum efficiency. The output ew power coupled out of a single-mode fibre achieves 1.3 and 0.9 W for the emission bandwidth of 27 and 110 nm, respectively. The results of preliminary lifetime tests predict the high enough reliability of these SLDs.
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页码：331 / 333
页数：3
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