Roles of atomic restructuring in interfacial phonon transport

被引:66
作者
Shin, Seungha [1 ]
Kaviany, Massoud [1 ]
Desai, Tapan [2 ]
Bonner, Richard [2 ]
机构
[1] Univ Michigan, Dept Mech Engn, Ann Arbor, MI 48109 USA
[2] Adv Cooling Technol Inc, Lancaster, PA 17601 USA
关键词
THERMAL-BOUNDARY CONDUCTANCE; MOLECULAR-DYNAMICS; RESISTANCE;
D O I
10.1103/PhysRevB.82.081302
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Phonon resistance can dominate the interfacial thermal resistance between hard and soft solids. Using ab initio calculation, molecular-dynamics simulation and the diffuse mismatch model for Si/In as example, we decompose phonon interfacial resistance into boundary and interfacial-region resistances. These show that the interfacial atomic restructuring as well as the cross-boundary interactions reduce the phonon boundary resistance by providing additional transport channels altering their phonon density of states and cause extra interfacial-region resistances due to additional phonon scattering.
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页数:4
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