GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 μm at Room Temperature

被引：60

作者：

Cerutti, L. ^{[1
]}

Rodriguez, J. B. ^{[1
]}

Tournie, E. ^{[1
]}

机构：

[1] Univ Montpellier 2, CNRS, IES, UMR 5214, F-34095 Montpellier 5, France

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 08期

关键词：

Antimonide; GaInSb quantum well (QW); GaSb substrate; monolithic integration; semiconductor lasers; silicon substrate; INP;

D O I：

10.1109/LPT.2010.2042591

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the potential of GaSb-based lasers for emission at 1.55 mu m and monolithic integration on silicon. We designed an active region based on strained Ga0.8In0.2Sb quantum-wells aiming a good carrier confinement. To validate this design, the active region was first used in edge-emitting lasers grown on GaSb substrates. Continuous-wave operation at 1.56 mu m has been achieved up to 45 degrees C. The same laser structure grown on Si substrate showed room-temperature operation in pulsed regime at 1.55 mu m with a threshold current density of 5 kA/cm(2).

引用

收藏

页码：553 / 555

页数：3

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