Epitaxial growth of spatially inverted GaP for quasi phase matched nonlinear optical devices

被引：27

作者：

Matsushita, Tomonori

Yamamoto, Takahisa

Kondo, Takashi

机构：

[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 17-19期

关键词：

gallium phosphide; quasi phase matching; nonlinear optical devices; molecular beam epitaxy; sublattice reversal epitaxy; antiphase boundary; transmission electron microscopy;

D O I：

10.1143/JJAP.46.L408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have succeeded in growing spatially inverted Gap epilayers by sublattice, reversal epitaxy technique. The spatially inverted GaP epilayers can be grown reproducibly on Si interlayers deposited on GaP (100) substrates tilted toward [011]. We suggest the origin of sublattice reversal in GaP is self-annihilation of antiphase boundaries dominantly formed by Ga-Ga bonds.

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收藏

页码：L408 / L410

页数：3

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