Thermovoltage in scanning tunneling microscopy

被引:21
作者
Hoffmann, D
Seifritz, J
Weyers, B
Möller, R [1 ]
机构
[1] Univ Essen, Fachbereich Phys, D-45117 Essen, Germany
[2] Robert Bosch GmbH, FV FLAAAA, D-70049 Stuttgart, Germany
关键词
D O I
10.1016/S0368-2048(00)00111-0
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
If the sample and the tip of a scanning tunneling microscope are at different temperatures a 'thermovoltage' arises which is superposed on the external bias. Although it is small it can be measured with high accuracy applying scanning tunneling potentiometry. Since it depends on the details of the electronic states contributing to the tunneling process it provides useful information, e.g, on interference patterns of electronic surface states, on the distribution of different chemical elements on a surface etc. Results on homogeneous as well as on inhomogeneous metallic surfaces will be shown. The correlation between the thermovoltage and the electronic states will be discussed for the Si(111) 7X7 surface. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:117 / 125
页数:9
相关论文
共 13 条
[1]   TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J].
BARDEEN, J .
PHYSICAL REVIEW LETTERS, 1961, 6 (02) :57-&
[2]  
CROMMIE MF, 1993, NATURE, V524, P363
[3]   SURFACE ELECTRONIC-STRUCTURE OF SI(111)-(7 X 7) RESOLVED IN REAL SPACE [J].
HAMERS, RJ ;
TROMP, RM ;
DEMUTH, JE .
PHYSICAL REVIEW LETTERS, 1986, 56 (18) :1972-1975
[4]   DIRECT OBSERVATION OF STANDING-WAVE FORMATION AT SURFACE STEPS USING SCANNING TUNNELING SPECTROSCOPY [J].
HASEGAWA, Y ;
AVOURIS, P .
PHYSICAL REVIEW LETTERS, 1993, 71 (07) :1071-1074
[5]   POTENTIALS, BAND STRUCTURES, AND FERMI SURFACES IN THE NOBLE-METALS [J].
JEPSEN, O ;
GLOTZEL, D ;
MACKINTOSH, AR .
PHYSICAL REVIEW B, 1981, 23 (06) :2684-2696
[6]   HIGH-RESOLUTION PHOTOEMISSION-STUDY OF THE ELECTRONIC-STRUCTURE OF THE NOBLE-METAL (111) SURFACES [J].
KEVAN, SD ;
GAYLORD, RH .
PHYSICAL REVIEW B, 1987, 36 (11) :5809-5818
[7]  
Kohler M, 1940, ANN PHYS-BERLIN, V38, P542
[8]   VACUUM TUNNELING THERMOPOWER - NORMAL METAL-ELECTRODES [J].
LEAVENS, CR ;
AERS, GC .
SOLID STATE COMMUNICATIONS, 1987, 61 (05) :289-295
[9]   SCANNING TUNNELING POTENTIOMETRY [J].
MURALT, P ;
POHL, DW .
APPLIED PHYSICS LETTERS, 1986, 48 (08) :514-516
[10]   THERMOPOWER IN SCANNING-TUNNELING-MICROSCOPE EXPERIMENTS [J].
STOVNENG, JA ;
LIPAVSKY, P .
PHYSICAL REVIEW B, 1990, 42 (14) :9214-9216