Suppression of exciton-exciton annihilation in tungsten disulfide monolayers encapsulated by hexagonal boron nitrides

被引：112

作者：

Hoshi, Yusuke ^{[1
]}

Kuroda, Takashi ^{[2
]}

Okada, Mitsuhiro ^{[3
]}

Moriya, Rai ^{[1
]}

Masubuchi, Satoru ^{[1
]}

Watanabe, Kenji ^{[2
]}

Taniguchi, Takashi ^{[2
]}

Kitaura, Ryo ^{[3
]}

Machida, Tomoki ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan

[2] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[3] Nagoya Univ, Dept Chem, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

PHYSICAL REVIEW B | 2017年 / 95卷 / 24期

基金：

日本科学技术振兴机构;

关键词：

LIGHT-EMITTING-DIODES; CHARGED EXCITONS; WS2; PHOTOLUMINESCENCE; MOS2; EMISSION; DYNAMICS; TRIONS; ENERGY; STATES;

D O I：

10.1103/PhysRevB.95.241403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigates exciton-exciton annihilation (EEA) in tungsten disulfide (WS2) monolayers encapsulated by hexagonal boron nitride (hBN). It is revealed that decay signals observed by time-resolved photoluminescence (PL) are not strongly dependent on the exciton densities of hBN-encapsulated WS2 monolayers (WS2/hBN). In contrast, the sample without the bottom hBN layer (WS2/SiO2) exhibits a drastic decrease of decay time with increasing exciton density due to the appearance of a rapid PL decay component, signifying nonradiative EEA-mediated recombination. Furthermore, the EEA rate constant of WS2/hBN was determined as (6.3 +/- 1.7) x 10(-3) cm(2) s(-1), being about 2 orders of magnitude smaller than that of WS2/SiO2. Thus, the observed EEA rate reduction played a key role in enhancing luminescence intensity at high exciton densities in the WS2 monolayer.

引用

页数：6

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