Spin Direction-Controlled Electronic Band Structure in Two-Dimensional Ferromagnetic CrI3

被引:170
作者
Jian, Peiheng [1 ,2 ]
Li, Lei [1 ,2 ]
Liao, Zhaoliang [3 ,7 ]
Zhao, Y. X. [4 ,5 ,6 ]
Zhong, Zhicheng [1 ,2 ]
机构
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China
[3] Univ Twente, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands
[4] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[5] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China
[6] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[7] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
关键词
Giant magneto band structure; CrI3; two-dimensional materials; ferromagnetism; ANISOTROPIC MAGNETORESISTANCE; INTRINSIC FERROMAGNETISM; ANTIFERROMAGNETISM; RESISTIVITY; CRYSTAL; ENERGY;
D O I
10.1021/acs.nanolett.8b01125
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Manipulating physical properties using the spin degree of freedom constitutes a major part of modern condensed matter physics and is a key aspect for spintronics devices. Using the newly discovered two-dimensional van der Waals ferromagnetic CrI3 as a prototype material, we theoretically demonstrated a giant magneto band-structure (GMB) effect whereby a change of magnetization direction significantly modifies the electronic band structure. Our density functional theory calculations and model analysis reveal that rotating the magnetic moment of CrI3 from out-of-plane to in-plane causes a direct-to-indirect bandgap transition, inducing a magnetic field controlled photoluminescence. Moreover, our results show a significant change of Fermi surface with different magnetization directions, giving rise to giant anisotropic magnetoresistance. Additionally, the spin reorientation is found to modify th e topological states. Given that a variety of properties are determined by band structures, our predicted GMB effect in CrI3 opens a new paradigm for spintronics applications.
引用
收藏
页码:3844 / 3849
页数:6
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