Black Phosphorous Thin-Film Transistor and RF Circuit Applications

被引：12

作者：

Chowdhury, Sk. F. ^{[1
,2
]}

Yogeesh, Maruthi N. ^{[1
]}

Banerjee, Sanjay K. ^{[1
]}

Akinwande, Deji ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

[2] NXP Semicond, Austin, TX 78735 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 04期

基金：

美国国家科学基金会;

关键词：

Black phosphorous FET; RF; amplifier; matching; mixer; demodulator; GRAPHENE; MOBILITY;

D O I：

10.1109/LED.2016.2536102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we discuss the design, fabrication, and high-frequency characterization of black phosphorous (BP)-based field-effect transistors (FETs) and their circuit applications. We demonstrate BP radio frequency (RF) FETs with an extrinsic transit frequency similar to 3 GHz and an extrinsic maximum oscillation frequency similar to 7 GHz. We also demonstrate various BP FET-based RF circuits working in the megahertz range for the first time. We show the design and simulation of BP-based RF amplifier using experimentally obtained scattering parameters, operating at gigahertz frequency with substantial gain. The experimental and simulation results reveal the major performance bottlenecks of these circuits and place BP FET as a promising device candidate for future thin-film nanoelectronic RF systems.

引用

页码：449 / 451

页数：3

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