Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films

被引:20
作者
Farrell, R. A. [1 ]
Cherkaoui, K.
Petkov, N.
Amenitsch, H.
Holmes, J. D.
Hurley, P. K.
Morris, M. A.
机构
[1] Natl Univ Ireland Univ Coll Cork, Dept Chem, Mat & Supercrit Fluid Sect, Cork, Ireland
[2] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
[3] Austrian Acad Sci, Inst Biophys & Xray Struct Res, A-8010 Graz, Austria
基金
爱尔兰科学基金会;
关键词
D O I
10.1016/j.microrel.2007.01.020
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The physical and electrical properties of self-assembled mesoporous silica thin films with defined 2D hexagonal porous architectures have been evaluated in the following study. Self-assembled mesoporous silica thin (MPS) films have been prepared by evaporation-induced self-assembly (EISA) methods using the triblock copolymer (C,Hz)r0b(C3H3)70(C,H,)ro6 (Pluronic F127 (R)). The MPS films exhibit remarkably low level leakage currents (1 x 10(-8)-1 x 10(-7) A/cm(2) at 1 MV/cm(1)) and high breakdown voltages (>3 MV/cm(1)). The films have dielectric constants of approximately 2.3, low dielectric loss factors of 0.01-0.03 and exhibit negligible frequency dispersion of dielectric constant between 100 kHz and 1 MHz. The effect of physisorbed water (humidity) upon the electrical properties of the films is also investigated using capacitance-voltage techniques. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:759 / 763
页数:5
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