Dual Al2O3/Hf0.5Zr0.5O2 Stack Thin Films for Improved Ferroelectricity and Reliability

被引：24

作者：

Li, Yu-Chun ^{[1
]}

Li, Xiao-Xi ^{[1
]}

Wu, Mao-Kun ^{[2
]}

Cui, Bo-Yao ^{[2
]}

Wang, Xue-Pei ^{[2
]}

Huang, Teng ^{[1
]}

Gu, Ze-Yu ^{[1
]}

Ji, Zhi-Gang ^{[2
]}

Yang, Ying-Guo ^{[1
]}

Zhang, David Wei ^{[1
]}

Lu, Hong-Liang ^{[1
]}

机构：

[1] Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[2] Shanghai Jiao Tong Univ, Dept Micro Nano Elect, Shanghai 200240, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Al2O3; HZO; dual DE/FE stack; ferroelectricity; fatigue; SWITCHING ENDURANCE;

D O I：

10.1109/LED.2022.3185246

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a dual Al2O3/Hf0.5Zr0.5O2 (HZO) stack structure ferroelectric (FE) capacitor was designed and fabricated. It is found that the dielectric (DE) Al2O3 thin film at the middle position of FE HZO thin films could apparently affect the behaviors of the oxygen vacancies at DE/FE interface and the electric field distribution, thereby affecting the corresponding ferroelectricity and reliability. By modulating the thickness of Al2O3 middle layer (ML), it is demonstrated that the FE capacitor with 1 nm Al2O3 ML exhibits better FE and cycling properties, including wake-up free, weaker fatigue effect, and robust endurance. Specifically, the device performs a considerable remnant polarization (2P(r)) of 36.2 mu C/cm(2) with a coercive electric field (2E(c)) of 2.7 MV and 2P(r) > 20 mu C/cm(2) after 10(10) cycles at 3 MV/cm. This work paves the pathway to optimize the ferroelectricity and reliability for future FE application.

引用

页码：1235 / 1238

页数：4

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