Dynamic avalanche and reliability of high voltage diodes

被引：46
作者：
Lutz, J
Domeij, M
机构：
[1] Tech Univ Chemnitz, Fak ET IT, D-09107 Chemnitz, Germany
[2] Royal Inst Technol, KTH, Dept Microelect & Informat Technol, S-16440 Kista, Sweden
来源：
MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 04期
关键词：
DEVICES;
D O I：
10.1016/S0026-2714(03)00020-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Diode failures are a limiting factor for the reliability of power circuits. One failure reason is dynamic avalanche, Dynamic avalanche can be distinguished in three degrees, and some designs are rugged up to the third degree. Design modifications for improving the dynamic ruggedness and suitable test conditions are proposed. (C) 2003 Elsevier Science Ltd. All rights reserved.
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收藏
页码：529 / 536
页数：8
相关论文
共 20 条
[1]   Electroactive passivation of high power semiconductor devices with punch through design by hydrogenated amorphous carbon layers (a-C:H) [J].
Barthelmess, R ;
Beuermann, M ;
Metzner, D ;
Schmidt, G ;
Westerholt, D ;
Winter, N ;
Gerstenmaier, YC ;
Reznik, D ;
Ruff, M ;
Schulze, HJ ;
Willmeroth, A .
ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, :181-184
[2]   A high voltage IGBT and diode chip set designed for the 2.8 kV DC link level with short circuit capability extending to the maximum blocking voltage [J].
Bauer, F ;
Kaminski, N ;
Linder, S ;
Zeller, H .
12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS, 2000, :29-32
[3]   REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS [J].
BENDA, H ;
SPENKE, E .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1331-&
[4]  
Benda V., 1999, Power Semiconductor Devices
[5]   Stable dynamic avalanche in Si power diodes [J].
Domeij, M ;
Breitholtz, B ;
Östling, M ;
Lutz, J .
APPLIED PHYSICS LETTERS, 1999, 74 (21) :3170-3172
[6]  
DOMEIJ M, IN PRESS IEEE T ELEC
[7]   AVALANCHE CHARACTERISTICS AND FAILURE MECHANISM OF HIGH VOLTAGE DIODES [J].
EGAWA, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) :754-+
[8]   CALCULATION OF AVALANCHE BREAKDOWN VOLTAGES OF SILICON P-N JUNCTIONS [J].
FULOP, W .
SOLID-STATE ELECTRONICS, 1967, 10 (01) :39-&
[9]  
Laska T., 2000, PCIM 2000. Europe Official Proceedings of the Forty-First International Power Conversion. Conference, P15
[10]  
LUTZ J, 1997, P 7 EUR C POW EL APP
12