Multichannel silicon drift detectors for X-ray spectroscopy

被引：15

作者：

Lechner, P ^{[1
]}

Buttler, W ^{[1
]}

Fiorini, C ^{[1
]}

Hartmann, R ^{[1
]}

Kemmer, J ^{[1
]}

Krause, N ^{[1
]}

Leutenegger, P ^{[1
]}

Longoni, A ^{[1
]}

Soltau, H ^{[1
]}

Stötter, D ^{[1
]}

Stötter, R ^{[1
]}

Strüder, L ^{[1
]}

Weber, U ^{[1
]}

机构：

[1] KETEK GmbH, Oberschleissheim, Germany

来源：

X-RAY OPTICS, INSTRUMENTS, AND MISSIONS III | 2000年 / 4012卷

关键词：

silicon drift detector; X-ray spectroscopy; X-ray detector;

D O I：

10.1117/12.391596

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

Silicon Drift Detectors (SDDs) with integrated readout transistor combine a large sensitive area with a small value of the output capacitance and are therefore well suited for high resolution, high count rate X-ray spectroscopy. The low leakage current level obtained by the elaborated process technology makes it possible to operate them at room temperature or with moderate cooling. The monolithic combination of a number of SDDs to a Multichannel Drift Detector solves the limitation in size of the single device and allows the realisation of new physics experiments and systems. The description of the device principle is followed by the introduction of the Multichannel Drift Detector concept. Layout, performance, and examples of current and future applications are given.

引用

页码：592 / 599

页数：8

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