The synthesis of lead-free ferroelectric Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3 thin films by sol-gel method

被引：81

作者：

Yu, T. ^{[1
]}

Kwok, K. W. ^{[1
]}

Chan, H. L. W. ^{[1
]}

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys & Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China

来源：

MATERIALS LETTERS | 2007年 / 61卷 / 10期

关键词：

ferroelectric; sol-gel process; lead-free; MPB;

D O I：

10.1016/j.matlet.2006.08.023

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(1-x)Bi0.5Na0.5TiO3-xBi(0.5)K(0.5)TiO(3) [BNT-BKT-100x] thin films have been successfully deposited on Pt/Ti/SiO2/Si substrates by a sol-gel process together with rapid thermal annealing. A morphotropic phase boundary (MPB) between Bi0.5Na0.5TiO3 and Bi0.5K0.5TiO3 was determined around x similar to 0.15. Near the MPB, the film exhibits the largest grain size, the highest epsilon value (360) and the largest P-r value (13.8 mu C/cm(2)). The BNT-BKT thin film system is expected to be a new and promising candidate for lead-free piezoelectric applications. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2117 / 2120

页数：4

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