Characteristics of Zn1-xMnxO thin films prepared by RF magnetron sputtering

We demonstrate the characteristics of Zn1-xMnxO thin films grown on (0001) Al2O3 substrates using an RF magnetron sputtering system. By increasing the Mn content, the films exhibited increases in both the c-axis lattice constant and fundamental bandgap energy. From the results of atomic force microscopy study. we confirmed that the morphology of Zn1-xMnxO was sensitively affected by changing substrate temperature. The curie temperature obtained from temperaturedependent magnetization curves was 70 K for the film with x = 0.07, depending on the Mn composition in the films. The remanent magnetization and coercive field of Zn0.93Mn0.07O at 5 K were 1.2 emu/g and 500 Oe, respectively.